SI2302ADS vishay siliconix new product document number: 71831 s-20617?rev. b, 29-apr-02 www.vishay.com 1 n-channel 1.25-w, 2.5-v mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.085 @ v gs = 4.5 v 2.4 20 0.115 @ v gs = 2.5 v 2.0 g s d top view 2 3 to-236 (sot-23) 1 si2302ds (2a)* *marking code absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit limit unit drain-source voltage v ds 20 gate-source voltage v gs 8 v t a = 25 c 2.4 2.1 continuous drain current (t j = 150 c) a t a = 70 c i d 1.9 1.7 pulsed drain current a i dm 10 a continuous source current (diode conduction) a i s 0.94 0.6 t a = 25 c 0.9 0.7 power dissipation a t a = 70 c p d 0.57 0.46 w operating junction and storage temperature range t j , t stg ?55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 5 sec. 115 140 maximum junction-to-ambient a steady state r thja 140 175 c/w notes a. surface mounted on fr4 board. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
SI2302ADS vishay siliconix new product www.vishay.com 2 document number: 71831 s-20617 ? rev. b, 29-apr-02 specifications (t a = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit static drain-source breakdown voltage v( br)dss v gs = 0 v, i d = 10 a 20 gate-threshold voltage v gs(th) v ds = v gs , i d = 50 a 0.65 0.95 1.2 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = 20 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 55 c 10 a v ds 5 v, v gs = 4.5 v 6 on-state drain current a i d(on) v ds 5 v, v gs = 2.5 v 4 a v gs = 4.5 v, i d = 3.6 a 0.045 0.085 drain-source on-resistance a r ds(on) v gs = 2.5 v, i d = 3.1 a 0.070 0.115 forward transconductance a g fs v ds = 5 v, i d = 3.6 a 8 s diode forward voltage v sd i s = 0.94 a, v gs = 0 v 0.76 1.2 v dynamic total gate charge q g 4.0 10 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 3.6 a 0.65 nc gate-drain charge q gd 1.5 input capacitance c iss 300 output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz 120 pf reverse transfer capacitance c rss 80 switching turn-on delay time t d(on) 7 15 rise time t r v dd = 10 v, r l = 5.5 55 80 turn-off delay time t d(off) v dd = 10 v, r l = 5.5 i d 3.6 a, v gen = 4.5 v, r g = 6 16 60 ns fall-time t f 10 25 notes a. pulse test: pw 300 s duty cycle 2%..
SI2302ADS vishay siliconix new product document number: 71831 s-20617 ? rev. b, 29-apr-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 on-resistance vs. drain current output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 0 2 4 6 8 10 012345 t c = 125 c ? 55 c 0, 0.5, 1 v v gs = 5 thru 2.5 v 1.5 v 2 v 0 100 200 300 400 500 600 048121620 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 0 50 100 150 0 1 2 3 4 5 012345 0.00 0.03 0.06 0.09 0.12 0.15 0246810 gate charge ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs c rss c oss c iss v ds = 10 v i d = 3.6 a ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature v gs = 4.5 v i d = 3.6 a t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) v gs = 2.5 v v gs = 4.5 v 25 c
SI2302ADS vishay siliconix new product www.vishay.com 4 document number: 71831 s-20617 ? rev. b, 29-apr-02 typical characteristics (25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power (w) ? 0.5 ? 0.4 ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 0.3 ? 50 0 50 100 150 0.00 0.04 0.08 0.12 0.16 0.20 02468 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 600 ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s t j ? temperature ( c) variance (v) v gs(th) 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 i d = 3.6 a i d = 250 a 10 0.001 10 0.01 0.10 1.00 10.00 100.00 1000.00 time (sec) 10 8 4 0 2 6 t j = 25 c t j = 150 c 1 0.1 t c = 25 c single pulse 100
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